快速退火对溅射沉积Al膜微结构及应力的影响

INFLUENCE OF RAPID THERMAL ANNEALING ON THE MICROSTRUCTURE AND STRESS OF SPUTTERED Al FILM

用直流溅射法在聚酰亚胺(PI)基底上制备了300 nm厚的Al膜,并进行快速退火(RTA)处理。用X射线衍射、扫描电子显微镜和曲率法对Al薄膜的微结构及应力随退火温度和时间的变化进行了研究。结果表明,采用快速退火可以使其压应力松弛,甚至转变成张应力。

A1 thin films with the thickness of 300 nm were deposited on polyimide （PI） substrate by direct current sputtering. All films were treated by rapid thermal annealing （RTA） with different temperatures and time. The films＇ microstructure and stress were studied by X-ray diffraction, scanning electron microscope and testing curvature. The thin film stress can be relaxed and changed from compressive stress to tensile stress by using RTA.