摘要
提出了一种表面修饰的金属诱导晶化方法,以稳定地获得晶粒尺寸均匀的多晶硅薄膜.为在非晶硅表面获得均匀稳定的Ni源,在晶化前驱物表面浸沾Ni盐溶液之前,先旋涂一层表面亲合剂.通过控制Ni盐溶液的浓度,可以获得均匀性较好、晶粒尺寸分布在20—70μm的多晶硅薄膜.该方法的特点是改善了Ni盐溶液在表面的黏附状态,从而可在比常规Ni盐溶液浓度低1—2个数量级的情况下仍能获得大晶粒的多晶薄膜.
To obtain poly-Si with good uniformity and stability, a new method of solution-based metal-induced crystallization (S-MIC) with surface-embellishment was proposed in this paper. A special solution that can embellish the surface of a-Si was employed to improve the conglutination between nickel and a-Si thin film. Before the nickel solution was spin coated, the special solution was spin coated on the a-Si sample at first. By controlling the nickel salt concentration, the poly-Si with grain size of 20-70 μm and good uniformity could be achieved. Furthermore, the nickel salt concentration is lower than that used in the traditional method of S-MIC by 1 or 2 orders of magnitude.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第4期2476-2480,共5页
Acta Physica Sinica
基金
国家高技术研究发展计划(批准号:2004AA303570)
国家自然科学基金重点项目(批准号:60437030)
天津市自然科学基金(批准号:05YFJMJC01400)资助的课题~~
关键词
表面修饰
溶液法金属诱导晶化
多晶硅
均匀性
surface-embellishment, solution-based metal-induced crystallization, poly-Si, uniformity