摘要
用直流磁控溅射方法制备了双合成反铁磁结构Co90Fe10(5nm)/Ru(xnm)/Co90Fe10(3nm)/Ru(ynm)/Co90Fe10(5nm)(x=0.45,0.45,1.00;y=0.45,1.00,1.00)的系列样品,并对样品的性能及其作为钉扎层对自旋阀巨磁电阻(GMR)效应的影响进行了研究.结果表明,双合成反铁磁结构比普通合成反铁磁结构Co90Fe10(5nm)/Ru(0.5nm)/Co90Fe10(3nm)具有更优越的性能,并且双合成反铁磁结构作为钉扎层对自旋阀的GMR有很大提高.
The properties of dual-synthetic antiferromagnet (DSAF) structure Co90 Fe10 (5 nm)/Ru( x nm)/Co90 Fe10 (3 nm)/Ru( y nm)/Co90Fe10(5 nm) (in which x = 0.45 y = 0.45; x = 0.45 y = 1; x = 1, y = 1) were studied. The effect of DSAF structure on giant magnetoresistance (GMR) single spin-valve (SPV) structures was also studied. The study shows that the properties of DSAF are better than those of the conventional synthetic antiferromagnet Co90 Fe10 (5 nm)/Ru(0.5 nm)/Co90 Fe10 (3 nm). We demonstrated that the DSAF structure as a pinned layer dramatically enhances the GMR ratio in single SPV films at room temperature.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第4期2509-2513,共5页
Acta Physica Sinica
基金
国家自然科学基金(批准号:50571021,90607020)
北京市自然科学基金(批准号:2063030)
教育部科学技术研究计划重点项目(批准号:107116)
国家重点基础研究发展规划(批准号:2007CB936202)
教育部新世纪优秀人才支持计划(批准号:NCET-20060420151)资助的课题~~
关键词
双合成反铁磁
自旋阀
巨磁电阻
dual-synthetic antiferromagnet, spin-valve, giant magnetoresistance