双合成反铁磁结构及其对自旋阀巨磁电阻效应的影响

Effect of dual-synthetic antiferromagnet structre on giant magnetoresistance in spin valves

用直流磁控溅射方法制备了双合成反铁磁结构Co90Fe10(5nm)/Ru(xnm)/Co90Fe10(3nm)/Ru(ynm)/Co90Fe10(5nm)(x=0.45,0.45,1.00;y=0.45,1.00,1.00)的系列样品,并对样品的性能及其作为钉扎层对自旋阀巨磁电阻(GMR)效应的影响进行了研究.结果表明,双合成反铁磁结构比普通合成反铁磁结构Co90Fe10(5nm)/Ru(0.5nm)/Co90Fe10(3nm)具有更优越的性能,并且双合成反铁磁结构作为钉扎层对自旋阀的GMR有很大提高.

The properties of dual-synthetic antiferromagnet （DSAF） structure Co90 Fe10 （5 nm）/Ru（ x nm）/Co90 Fe10 （3 nm）/Ru（ y nm）/Co90Fe10（5 nm） （in which x = 0.45 y = 0.45; x = 0.45 y = 1; x = 1, y = 1） were studied. The effect of DSAF structure on giant magnetoresistance （GMR） single spin-valve （SPV） structures was also studied. The study shows that the properties of DSAF are better than those of the conventional synthetic antiferromagnet Co90 Fe10 （5 nm）/Ru（0.5 nm）/Co90 Fe10 （3 nm）. We demonstrated that the DSAF structure as a pinned layer dramatically enhances the GMR ratio in single SPV films at room temperature.