注入Ar^＋的蓝宝石晶体退火前后光致发光谱的分析

Photoluminescence of Ar^+ implanted sapphire before and after annealing

对注入Ar+后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar+注入后,其光致发光谱中均出现了新的位于506nm处的发光峰;真空和空气气氛下的退火均对样品在506nm处的发光有增强作用,不同晶面取向的样品发光增强程度不同,且发光增强至最大时的退火温度也不同,空气气氛下的退火使样品发光增强程度更为显著.由此可以看出,退火气氛、退火温度和晶面取向均对样品发光峰强度有影响.

Single crystals of sapphire （ Al2 O3 ） with （0001）, （1010） and （1120） orientations were implanted at 623 K with 110 keY Ar ions to fluenee of 9.5 ×10^16 cm^-2 . The ion-implanted Al2O3 samples were annealed at 873, 1073, 1273 and 1373 K for 60 min in vacuum and in air, respectively. Photoluminescence （PL） spectra of the as-implanted samples showed an emission band at 506 nm, with excitation wavelength at 300 nm. The PL peak intensity of （0001） and （1010） orientation samples were maximum after annealing at 1073 K in both vacuum and in air. The annealing in air at 873, 1073 and 1273 K lead to much higher PL peak intensity compared to annealing in vacuum. In all the samples the emission band disappeared after annealing at 1373 K both in vacuum and in air. The experimental results indicate that annealing temperature, annealing atmosphere and crystal orientation play important roles for the PL peak intensity at 506 nm of sapphire implanted with Ar ions. The PL peak at 506 nm after Ar-implantation and annealing is related with the population of interstitial AI atoms introduced lay the ion bombardment and the formation of argon gas bubbles and the resolution of Ar atoms during annealing.