摘要
在玻璃衬底上用射频磁控溅射技术进行了非晶态碲镉汞（a-HgCdTe,a-MCT）薄膜的低温生长.采用X射线衍射（XRD）和原子力显微（AFM）技术对所生长的薄膜进行分析研究,所生长的非晶态HgCdTe薄膜表面平整,没有晶粒出现,获得了射频磁控溅射生长非晶态HgCdTe薄膜的“生长窗口”.采用傅里叶红外透射光谱分析技术对非晶态HgCdTe薄膜进行了光学性能研究,在1.0-2.0μm范围内研究了薄膜的透射谱线,获得了薄膜的吸收系数（-8×104cm^-1）,研究了其光学带隙（约0.83eV）和吸收边附近的3个吸收区域.
Amorphous HgCdTe（a-HgCdTe or a-MCT） films on glass substrate were deposited by RF magnetron sputtering technology. The amorphous structure of the MCT films were studied by XRD and AFM technology and the ＂growth window＂ of a-MCT was obtained. FTIR technology was used to study the optical properties of amorphous MCT films and the absorption coefficient of amorphous MCT films （-8 × 10^4cm^-1） was obtained. We also observed three absorption regions near the optical gap of amorphous MCT. The optical gap of our a-MCT film is about 0.83eV.
基金
国家自然科学基金资助项目(批准号:60576069)~~
