摘要
通过对CMOS的PSP模型中四衬底电阻网络的等效电路进行Y参数分析,得到衬底电阻参数的完整提取方法.应用该方法提取了90nm CMOS工艺中射频nMOS器件的衬底电阻参数,实验数据和仿真比较表明该衬底电阻网络和相应的参数提取方法能精确预测器件的输出性能,模型精度确保使用频率可以达到20GHz以上.
An accurate method to extract substrate resistances of RF MOSFETs is proposed. The extraction method is based on equivalent circuit analysis for the PSP model. This method is experimentally validated on 90nm CMOS technology and predicts the output characteristics of MOSFETs accurately up to 20GHz.
