摘要
为研究感应耦合等离子体(ICP)刻蚀机工艺腔室结构对流场特性的影响,采用回归正交设计方法对腔室半径、腔室高度、进气口半径以及进气流量4个设计参数进行试验设计,利用商业软件CFD-ACE+建立ICP刻蚀机工艺腔室二维流场仿真模型.定义了静电卡盘上方气压分布均匀性评价函数,通过对试验结果的回归分析,确定了关键参数对气压分布均匀性影响程度的定量关系,并由此建立了拟合度较高的二次回归方程.结果表明腔室高度为最显著影响因素.经过验证可见,回归方程的计算结果与仿真分析结果保持了较高的一致性,可以为结构与工艺条件相近的刻蚀机、化学气相沉积(CVD)设备以及氧化/扩散系统的结构研究与设计提供参考.
We attempt to investigate the influence of the processing chamber configuration of an inductively coupled plasma （ICP） etcher on flow field characteristics. Four parameters, including chamber radius, chamber height, inlet radius, and inlet mass flow, are arranged regression orthogonally to study the two-dimensional flow field models of the processing chamber of the ICP etcher,which was built in the commercial software, CFD-ACE ＋. A function is defined to evaluate the uniformity of the pressure distribution above the electrostatic chuck. The quantificational relation between key parameters and the uniformity of pressure distribution was found through regression analysis of experimental results, and, furthermore, a quadric regression equation with high fitting degree was determined. The result demonstrates that the chamber height is the most significant factor. The results from the regression equation agree well with those from simulation. This research can provide insight into the study and design configuration of etchers, chemical vapor deposition （CVD） equipment, and oxidation/diffusion systems that are similar in configuration and processing condition.
基金
国家重点基础研究发展规划资助项目(批准号:2004CB318007)~~
