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LED芯片非接触在线检测方法 被引量：5

Online non-contact fault detection method of LED chip
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摘要 目前LED封装过程中由于缺乏有效的检测方法,导致产品的次品率较高。本文根据pn结的光生伏特效应,提出了一种针对LED封装半成品的非接触在线检测方法。该方法通过测量pn结光生伏特效应在引线支架中产生的光生短路电流,分析LED芯片功能状态及芯片与引线支架间的电气连接情况。在检测短路电流时,根据LED封装支架结构,采用互感原理实现非接触测量,克服了接触式测量的缺陷,提高了检测精度。研究表明,对红、黄、绿等各种颜色的LED,该方法都能快速有效地完成在线检测。 There is a lack of online test method for light-emitting diode （LED）chip during packaging process. An online non-contact fault detection method for LED chip in packaging is presented based on the photovoltaic effect in diode. By observing the current in the bonding lead frame of LED chip, which is induced by illuminating the chip, the LED chip function and its electric connection with the lead frame during packaging are detected. According to the structure of the LED lead frame, a method based on mutual induction is used to measure the photo-generated current without any contact with the LED chip. Experimental results show that LEDs with various colors could be detected online quickly and effectively.
作者 李恋 李平 文玉梅 尹飞
机构地区 重庆大学光电工程学院光电技术及系统教育部重点实验室
出处 《仪器仪表学报》 EI CAS CSCD 北大核心 2008年第4期760-764,共5页 Chinese Journal of Scientific Instrument
基金 国家自然科学基金(60676031) 重庆市科技攻关重大项目(CSTC 2005AA4006-B1)资助
关键词 LED 非接触检测 在线检测 光生伏特效应 封装 LED non-contact detection online detection photovoltaic effect packaging
分类号 TN312.8 [电子电信—物理电子学]
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参考文献13

  • 1FREESTON I L. From four point probe to impedance imaging[ J ]. Engineering Science and Education Journal, 1997,6(6) :245-254.
  • 2MORVIC M. On the measurement of high resistance semiconductors by the van der pauw method [ J ]. The Third Int. Euro Conf. Advanced Semiconductor Devices and Microsystems ,2000,16-18:327-330.
  • 3SEIGO I, HIDEO M. Failure analysis of wafer using backside OBIC method[ J]. Microelectronics and Reliability, 1998,38 ( 6-8 ) :993-996.
  • 4TAKESHITA T, SUGO M, SASAKI T, et al. Failure analysis of InGaAs/GaAs strained-Layer quantum-well lasers using a digital OBIC monitor[J]. IEEE Trans. Electron Devices, 2006, 53(2) :211-217.
  • 5KAMINSKI A, MARCHAND J J, LAUGIER A. I-V method to extract junction parameters with special emphasis on low series resistance[J]. Solid-state Electron, 1999,43:741-745.
  • 6MOORE B, MARGALA M, BACKHOUSE C. Design of wireless on-wafer submicron characterization system [ J ]. IEEE Trans. VLSI Systems,2005,13 (2) :169-180.
  • 7DAIBO M, SHIKODA A, YOSHIZAWA M. Non-contact evaluation of semiconductors using a laser SQUID microscope[ J]. Physica C,2002, 372-376 : 263-266.
  • 8MILES R W, HYNES K M, FORBES I. Photovoltaic solar cells: an overview of state-of-the-art cell development and environmental issues[J]. Progress in Crystal Growth and Characterization of Materials, 2005, 51 ( 1-3 ) : 1-42.
  • 9MOODY T. A new method for current transformer loading [ J ]. IEEE Trans. Parts, Hybrids, and Packaging, 1975, 11(3) : 221-225.
  • 10WARD D A, EXON J L T. Using rogowski coils for transient current measurements [ J ]. Engineering Science and Education Journal, 1993,2(3 ) : 105-113.

同被引文献40

  • 1田艳红,杭春进,王春青.Cu丝超声球焊及楔焊焊点可靠性及失效机理研究[J].电子工艺技术,2006,27(2):63-69. 被引量：7
  • 2STEIGERWALD D A, BHAT J C, COLLINS D, et al.Illumination with solid state lighting technology [ J ]. IEEE Journal of Selected Topics in Quantum Electronics, 2002,8(2) :310-320.
  • 3MUTHU S, CHUURMANS F J P S, PASHLEY M D. Red, Green, and Blue LEDs for white light illumination [ J ]. IEEE Journal of Selected Topics in Quantum Electronics, 2002,8:333 - 338.
  • 4PERALTA S, RUDA H. Applications for advanced solidstate lamps [ J ]. IEEE Industry Applications Magazine, 1998,4(4) :31-42.
  • 5WU D, ONG V K S. Determination of material parameters from regions close to the collector using electron beam-induced current[J]. IEEE Trans. on Electron Devices. 20-23, 1996 : 111 - 114.
  • 6RAGHUNATHAN R, BALIGA B J. EBIC investigation of edge termination techniques for silicon carbide power devices [ C ]. Power Semiconductor Devices and ICs, 1996. ISPSD'96 Proceedings, 8th International Symposium on, 1996:111-114.
  • 7SEIGO I, HIDEO M. Failure analysis of wafer using backside OBIC method[J]. Microelectronics and Reliability, 1998,38 (6-8) :993-996.
  • 8TAKESHITA T, SUGO M, SASAKI T, et al. Failure analysis of InGaAs/GaAs strained-Layer quantum-well lasers using a digital OBIC monitor [ J ]. IEEE Trans. Electron Devices, 2006,53 ( 2 ) : 211-217.
  • 9ChIANG C L, WAGNER S. On the theoretical basis of the surface photovoltage technique [ J ]. IEEE Trans. on Electron Devices. ED-32, 1985:1722-1726.
  • 10DAIBO M, SHIKODA A, YOSHIZAWA M. Non-contact evaluation of semiconductors using a laser SQUID microscope[ J]. Physica C, 372-376,2002:263-266.

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仪器仪表学报
2008年 第4期

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