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A study on Al_2O_3 passivation in GaN MOS-HEMT by pulsed stress

A study on Al_2O_3 passivation in GaN MOS-HEMT by pulsed stress
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摘要 This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) by applying pulsed stress to the device. Low-temperature layer of Al2O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition (ALD). For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD Al2O3. A small increase in Id in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Id - Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD Al2O3. This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) by applying pulsed stress to the device. Low-temperature layer of Al2O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition (ALD). For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD Al2O3. A small increase in Id in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Id - Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD Al2O3.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第4期1405-1409,共5页 中国物理B(英文版)
基金 Project supported by NSFC (Grant No 60736033) National 973 Basic Research Project (Grant No 51327020301)
关键词 AlGaN/GaN MOS-HEMT AL2O3 PASSIVATION AlGaN/GaN MOS-HEMT, Al2O3, passivation
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参考文献16

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