估算本征吸收技术中洁净区宽度的简捷方法

A Simple and Convenient Method to Estimate the Width of Clean-Zone in Silicon Wafers Treated by Internal Gettering

本文研究了在本征吸收技术中,硅片中氧外扩散后其浓度纵向分布的特点,提出了一种根据氧的外扩散时间来估算本征吸收技术中洁净区宽度的简捷方法。根据该方法能够很方便地估算出任意外扩散时间下的洁净区宽度,且在洁净区宽度小于20微米范围内,其结果与理论计算值之绝对误差小于1微米。

In this paper we investigate the distribution of oxygen in silicon wafers treated by internal gettering, and present a simple and convenient method to estimate the width of clean-zone according to the outdiffusion time of oxygen. On the basis of this method, the width of clean-zone in any outdiffusion time could be conveniently calculated. Compared to the accurate theoretic calculation, absolute error of this estimation is less than 1 micrometre in the range of 0-20 micrometre.