掺氧非晶硅的正电子寿命研究

Positron Lifetime Studies on Oxygen-Doped Amorphous Silicon Films

在室温下测量了掺氧非晶硅薄膜的正电子寿命谱．实验发现，随着掺氧量的增加，正电子寿命减小，对应的相对强度增加．据此，本文从电子密度、悬挂键和微空洞等方面讨论了氧掺杂对非晶硅薄膜微观结构的影响．

Positron lifetime measurements have been performed in a-Si: [H. O] amorphous silicon films as a function of oxygen content at room temperature. It is f0und that the value of the intermediate-lived component τ2 tends to decrease, while the value of the relative intensity I2 tends to increase, with the increasing of oxygen content. The influences of oxygen atom on the electronic density, the dangling bonds and the microvoids in amorphous silicon films are discussed.