摘要
本文根据MOS器件亚阈区转移特性国数强收敛的特点，提出了一种直接利用MOS器件转移特性确定亚阈区表面势的新方法．并讨论了界面馅饼的影响．研究结果表明，对于长沟器件，该方法的系统误差小于1．3％．与C－V法的对照实验表明，两者的结果偏差小于5％．
A new method for the determination of surface potential of MOSFET under subthreshold condition is introduced. Noting that the function between channel current and the surface potential possesses the property of strong coversion in subthreshold zone,we can use subthreshold current to express surface potential simplely and analytically.The total system error including that caused by interface traps is less than 1. 3%. Compared with the results ineasured with C-V method, there is a difference less than 5%.
基金
国家"八.五"攻关项目
关键词
MOS器件
亚阈区
表面热分析
Analysis
Field effect transistors
MOS devices
Surface properties
