适于低压低功耗工作的SOI栅控混合管(GCHT)的实验研究

Experimental Study of SOI Gate Controlled Hybrid Transistor (GCHT) Appropriate for Low Voltage Low Power Circuits

本文讨论了SOI栅控混合管（GCHT）的设计及制备．对这种器件的物理机制进行了实验验证，得到结论：GCHT漏端电流在栅压较高时趋向于双极电流，而不如文献[4]中报道是MOS电流．实验结果表明，这种混合管具有比纯MOSFET约高6．5倍，比纳BJT约高1．7倍的驱动能力，最高电流增益可达10000，最小亚阈摆幅可达66mV／dec，导通电压比纯BJT约低0．3V，比纯MOSFET约低0．7V由GCHT组成的反相器在Vdd=0.8V仍具有良好的直流传输特性．因此GCHT在低压低功耗应用领域中极具潜力，同时也将适于模拟电路方面的应用．

The design consideration and fabrication of gate controlled hybrid transistor (GCHT) are discussed. Detailed experimental results are used to verify the physical mechenism of GCHT. It is concluded that at high gate voltages, the driving current of GCHT is mainly pure BJT current,not MOS current which is reported in[4]. The conclusion agree with the theory proposed earlier by us[5,6]. The driving capability of the fabricated GCHT is about 1. 7and 6. 5 timcs higher than the corresponding pure BJT and pure MOSFET respectively, with the highest current gain be 10000. The switching-on voltage is about 0. 3V and 0. 7V lower than pure BJT and pure MOSFET,with subthreshold swing be 66mV/dce. The inverter composed of GCHTs has good DC transfer characteristic even at Vdd=0. 8V. Thus GCHT is promising for low voltage low power applications and analogue circuits as well.