摘要
本文首次提出了新型环形火山口式边缘阴极发射体结构．采用国内现有的半导体工艺制备了这种结构的阴极发射体和二极管阵列．在高超净室的大气和10－4Pa真空下测量了这种二极管阵列的I－V特性．大气下发射的开启电压大约为150伏，真空下的发射开启电压大约为70伏．最后还讨论了制备工艺中光刻套准偏差对发射的影响．分析结果表明偏心对发射的影响并不很明显．
A novel ring-volcano shaped edge field emitter structure is firstly proposed in this paper, and silicon field emitter and diode arrays have been successfully manufactured.Diode I-V character is tested under atmosphere and 10-4Pa vacuum. The turn-on voltage of field emission is about 150 volt. Photolithograph misalignment effect on emission is discussed by using a simplified model, insignificant effect on the emission is observed.
