n型InP(100)衬底上电沉积氧化锌薄膜的制备及光致发光(英文)

Photoluminescence and Formation of ZnO Thin Films on n-InP(100) by Electrodeposition

采用电化学沉积方法在n型InP(100)(1016)衬底上制备了氧化锌薄膜。探索线性扫描伏安法确定InP与0.1mol/LZn(NO3)2电解液的体系中沉积氧化锌的极化电势,在20℃溶液中,相对于甘汞电极(SCE)的极化电势为-1.1877V。扫描电镜照片显示:随着应用电势的降低,氧化锌薄膜变得紧密平滑;狭窄的X射线衍射峰也说明低电势下薄膜的结晶质量较好。光荧光表征发现低电势下制备的氧化锌薄膜具有良好的发光特性。

The ZnO thin films are fabricated by electrodeposition on n-type InP wafers at constant potential. Polarization potential of the deposition of ZnO is firstly confirmed using linear sweep vohammetry in 0.1 mol/L Zn（ NO3 ） 2 electrolyte/InP system, which is - 1.187 7 V vs. SCE at 20 ℃. Scanning electron microscopy shows that the thin films become smooth and compact with decreasing applied potential, and the narrow X-ray diffraction peaks also show the good crystal quality of the thin films. The optical properties of ZnO thin films are studied by photol spectrum measurements. The ZnO thin films obtained at low potential exhibits good photoluminescence.