C_(60)单晶生长的优化研究

Optimization of C_(60) Crystal Growth

用晶体生长动力学考察了籽晶法气相生长C60单晶体的生长工艺，得出关键在于处理成核与长大两个因素之间的矛盾。对管状炉的温度场进行了重新设计，将冷端的最低温度点移至合适部位，有效地控制了成核的数目。通过不断地优化实验，经选出恰当的冷、热端温度及生长周期，生长出的C6。单晶的最大钱度超过6mm，且有较高的结晶品质。同一单晶的劳厄像显示出C60的生长暴露面有（111）和（100）两种。

On inspecting the vapour growth techniqe of C60 single crystal using seed crystal,we conclude that it is crucial to balance nucleation and growth properly,based on the theory of crystal growth dynamics. In order to effectively control the number of nucleation,the temperature distribution in our tabular furnace was redesigned and the minlma of temperature in the furnace was removed to a suitable position.The temperatures of the cool zone and the hot zone as well as crystal growth periori were carefully selected. The biggest C60 single crystal we grew is bigger than 6 mm in size. The Laue's analysis of the crystal showed that the exposed surfaces of C60 crystal are of two orientations,namely {111} and {100}.