掺砷多晶硅边缘场发射阴极阵列的特性研究

A Study of the T-shaped Polysilicon Edge-field-emitter Arrays

提出了一种T形结构的边缘场发射阴极，它具有比通常的场发射体的发射面积大得多的特点。首次采用低压化学气相沉积技术生长内层重掺砷、外层较掺砷的多晶硅薄膜；利用氢氟酸／硝酸／冰醋酸腐蚀液对不同掺砷浓度多晶硅选择性腐蚀的特点，成功制备了T形结构的多晶硅边缘场发射阵列（FEA）；本方法对于制备类似结构的边缘场发射器件有意义。在此基础上建立了三极管几何模型，最后采用有限差分法对该三极管模型进行了静电分析。

The T-shaped edge field emitter arrays were successfully fabricated with each emitter possessing much larger emission area than needle-shaped emitters. The major features of the fabrication are the two key techniques . The first is to grow double-layered polysilicon films on n-typed Si wafers , one layerwith low As concentration on top of the film of heavy As concentration by LPCVD. The other is selective etching with a mixed solution of HF/HNO3COOH's(HHC) of the laminated films. These techniques may be of interest in the edge field emission devices fabrication . A feasible triode design was proposed based on the edge field emitter and its characteristics were also tentatively analyzed with finite difference calculation .