摘要
采用10 keV X射线,对NMOSFET在不同偏置条件下进行总剂量辐射,分析了辐照前后辐射感生的氧化物陷阱电荷与界面态电荷对MOS器件阈值电压的影响以及辐射导致漏电现象。实验结果表明,对于NMOSFET,On偏置条件是最劣偏置条件,Off偏置条件是最优偏置条件。
Total dose radiation tests were performed on NMOSFET＇ s using a 10 keV X-ray source at different bias voltages. Effects of radiation-induced oxide-traps and interface charges on the threshold voltage of NMOSFET＇s and radiation-induced leakage currents were analyzed. It has been demonstrated that the worst irradiation bias condition is On bias and the best irradiation bias condition is Off bias.
出处
《微电子学》
CAS
CSCD
北大核心
2008年第2期166-169,173,共5页
Microelectronics
基金
国家重点实验室基金资助项目(9140C030604070C0304)
国家重点实验室基金资助项目(9140C030601060C0302)
关键词
X射线
总剂量辐射效应
辐射偏置
中带电压法
X-ray
Total-dose irradiation effect
Radiation bias
Midgap separation method
