纳米多孔硅基薄膜的常压等离子体化学气相沉积过程研究

The Investigation of Depositing Si-based Thin Films with Nano Structure by Atmospheric Plasma-enhanced Chemical Vapor Deposition

采用常压等离子体化学气相沉积(APECVD)的方法制备了带有新颖结构和特殊蓝紫光(400nm左右)发光特性的硅基薄膜.通过在自行研制的等离子体反应装置中通入按100∶1∶1的体积比进行配比的SiH4∶H2∶Ar混合气体进行APECVD,在加负偏压条件下获得了由Si基组成的絮状多孔纳米结构薄膜.通过等离子体发射光谱测定了沉积过程中的电子温度在2.2eV左右,扫描电子显微镜(SEM)观测薄膜表面形貌后肯定了偏压对薄膜纳米结构的形成起着重要的作用.

The Si-based thin films with novel structure and photoluminescence （PL） emission wave length of 400 nm were deposited using atmosphere plasma-enhanced chemical vapor deposition （APECVD）. The wadding-like porous nanostructure silicon films were prepared with bias voltage, while the proportion of SiH4/H2/Ar gas mixture was 100： 1 ： 1. The plasma optical emission was recorded as 2. 2 eV by spectrometer and the surface pattern was investigated by scanning electron microscope （SEM）. The experiment results show that bias voltage has a great effect on formation of the nanostructure in the film.