高电导率高晶化率P型微晶硅薄膜的制备

Preparation of High Conductivity p-type μc-Si∶H Thin Films with High Crystalline Volume Fraction

利用射频等离子体增强化学气相沉积(RF-PECVD)技术,以B2H6为掺杂剂,在玻璃衬底上制备了厚度为40nm左右的p型微晶硅薄膜。为获得高电导率高晶化率的薄膜,采用正交实验法对衬底温度、氢稀释比及硼烷掺杂比等主要沉积参数进行初步优化。Raman光谱和电导率测试结果表明:(1)在实验选取的参数范围内,衬底温度是影响薄膜暗电导率和晶化率的最主要因素,其次是氢稀释比,硼烷掺杂比的影响相对较小;(2)通过正交优化,获得了暗电导率为2.05S·cm-1、晶化率为86%的p型微晶硅薄膜。

Using plasma enhanced chemical vapor deposition （RF-PECVD） technique p-type μc-Si：H thin films with the thickness of about 40nm are prepared on the glass substrate when B2H6 is used as dopant, For obtaining high dark conductivity of p-type μc-Si：H thin films with high crystalline volume fraction, the major processing parameters of the substrate temperature, hydrogen dilution ratio and boron doping ratio are primarily optimized by the method of orthogonal test. The results of Raman spectrum and the conductivity measurement indicate that （1） within selected parameters, the substrate temperature is the most significant factor influencing the dark conductivity and crystalline volume fraction; the hydrogen dilution ratio is secondary, and the influence of the doping ratio is relatively weak. （2） using the optimized parameters,p-type μc-Si：H thin films with the highest dark conductivity -2.05S·cm^-1 and crystalline volume fraction -86 % are obtained.