期刊文献+

高频、低ESR钽电解电容器新工艺的开发

Development of New Technology of Tantalum Electrolytic Capacitor with High Frequency & Low ESR
下载PDF
导出
摘要 从阳极尺寸和结构设计、阴极被膜工艺改进,分析固体钽电容器的等效串联电阻(ESR)值的影响因素,提出了制造高频、低ESR值固体钽电解电容器的新工艺。投入10V/100μF、10V/470μF两种规格产品,结果表明:阳极块厚度控制在1.5~2.1mm时,同一规格产品具有最小体积,接触电阻r金更小;在硝酸锰溶液中添加强氧化剂和表面活性剂,制得的MnO2层的r解更低;同时采用多芯并联结构,能使固体钽电解电容器的ESR值降低到通用钽电容器的ESR值的1/3~1/2,且100kHz时电容量变化值小于20%。 The factors affecting the ESR value of solid tantalum capacitor are analyzed through improving the anode's dimension & structure design and cathode coating process, The new process for fabricating high frequency and low ESR solid tantalum electrolytic capacitor is developed. Two spec products of 10V/100μF and 10V/470μF are produced by the new process, and the electric test result shows that there are the smallest volume and lower metal contacting resistance for the same style when the thickness of anode is controlled between 1.5 -2. 1 mm; adding strong oxidant and surfactant into Mn(NO3)2 solution, the electrolyte(MnO2) resistance becomes more low; at the same time, multi-anode in parallel can decrease the ESR of solid tantalum electrolytic capacitor to 1/3 -1/2 ESR value of general tantalum capacitor, and the capacitance tolerance at 100kHz is less than 20%.
出处 《材料导报》 EI CAS CSCD 北大核心 2008年第4期135-137,140,共4页 Materials Reports
基金 国家火炬计划项目(编号:2003EB011423)
关键词 高频 低等效串联电阻 多芯并联 钽电解电容器 high frequency, low equivalent series resistance(ESR), multi-anode in parallel, Ta electrolytic capacitor
  • 相关文献

参考文献8

  • 1Bispinck H, Ganschow O, Wie dmarm L, et al. Combined SIMS,AES,and XPS investigations of tantalum oxide layers[J]. Appl Phys, 1979, 18(2): 113
  • 2Lu Q.Anodic film growth on tantalum in dilute phosphoric acid solution at 20~C and 85℃[J]. Electrochem Acta, 2002,47(17): 2761
  • 3Prymak J D. New tantalum capacitors in power supply applica tions [C]. Industry Applications Conference, 1998.1129
  • 4Yuan L J,Li Z C,et al. Synthesis and characteriz- ation of activated MnOE[J]. Mater Lett, 2003,57(13-14): 1945
  • 5Qu D Y. Application of a. c. impedance technique to the study of the proton diffusion process in the porous MnO2 electrode[J]. Electrochim Acta, 2003,48 : 1675
  • 6Wang Chao, Fang Ling, Zhang Gong. Ⅰ-Ⅴ characteristics of tantalum oxide film and the effect of defects on its electrical properties[J]. Thin Solid Films, 2004, (458):246
  • 7陆胜,刘仲娥,梁正书,刘凌,阴学清.Ta_2O_5介质膜性能对液体钽电容器性能的影响[J].压电与声光,2006,28(4):475-477. 被引量:10
  • 8Pringle J P S. Transport numbers of metal and oxygen during the anodic oxidation of tantalum [J]. Electrochem Soc, 1973,120(3):398

二级参考文献9

共引文献9

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部