摘要
由CO2离化团束辐照Si表面形成的氧化层的厚度与CO2团束大小及团束能量相关，而其成分接近SiO2在低辐照剂量下，氧化层增厚服从反应规律，而在高剂量下服从扩散规律．
The thickness of oxide on Si surface induced by CO2 cluster ion beam irradiation depends on the CO2 cluster size and the beam energy. The thickening of oxide layer follows the reaction rule at lower irradiation dose, and the diffusion rule at higher dose.
关键词
二氧化碳
硅
气体离化团束
二氧化硅
Carbon dioxide
Ion beams
Ionization
Irradiation
Silica
