摘要
本文报道一种低阻高化学稳定的Al∶Ti合金的制备方法及其在a－SiTFT中的应用．所获Al∶Ti合金电极材料的电阻率可达6．6μΩ·cm，与纯铝的相近．Ti的加入使Al∶Ti合金惰性增强，有效地抑制了小丘（Hillock）的产生和阳极氧化时的被腐蚀现象．采用Al∶Ti合金栅和Al2O3／SiNx双层绝缘层的a-SiTFT有着与采用Ta栅和单层SiNx绝缘层的a－SiTFT相近的I－V参数，但前者稳定性明显提高．经+10V栅偏压处理1小时，未见VT漂移．这种双层冗余技术还能有效提高成品率．
The method of preparing Al∶Ti alloy film with low resistivity and high chemical stability, and its use in a-Si TFTs are reported. Its resistivity is about 6.6μΩ. cm which is nearly equal to the one of pure Al film. The Al∶Ti alloy film can effectively suppress the formation of hillock and the phenomenon that Al is etched out during anodization. The I-V characteristic of a-Si TFT with Al∶Ti alloy gate line and Al2O3/SiNx double insulator is similar to the one of a-Si TFT with Ta gate line and SiNx insulator. But the former stability is better than the latter one. The former VT does almost not change under +10V bias for 1 hour. The technology of double gate insulator can also improve the yield of a- Si TFT matrix.
基金
国家自然科学基金
天津市青年基金!(69577011)
关键词
半导体
铝钛合金栅
硅栅器件
α-硅
TFT
Aluminum alloys
Conductive materials
Gates (transistor)
Semiconducting silicon
Titanium alloys
