摘要
研究了用作薄介质栅的等离子体增强化学气相淀积（PECVD）方法低温形成的SiOxNy薄膜与其电学特性．探索该薄膜电学特性与微观组分，反应室气压，衬底工作温度，退火致密和金属化后退火等的相互关系．给出了获得电学特性优良的SiOxNy薄膜的优化PECVD工艺条件，同时对实验结果进行了理论分析与讨论．
SiOxNy thin film formed by low temperature Plasma Enhanced Chemical Vapour Deposition (PECVD)and its electrical characteristics for thin dielectric gate application have been studied. The inter-relation ships of the electrical characteristics of the thin film with the microscopical composition, chamber pressure, substrate work temperature, annealing densification and post-metallization annealing have been explored. The PECVD better process condition to acquire the SiOxNy thin film with better electrical characteristics is given. Some theoretical analyses and discussions of these experimental results are also made.
基金
国家自然科学基金
广东省自然科学基金
关键词
薄介质栅
薄膜晶体管
PECVD法
半导体薄膜技术
Chemical vapor deposition
Dielectric devices
Electric properties
Semiconducting silicon compounds
Thin film devices
