摘要
在薄膜混合集成电路中,以铝导带代替金导带不失为一种廉价而很有前景的工艺,但铝与银浆的黏接在一定的温度和时间下,会产生一种绝缘金属间化合物,需要一定的电压才能击穿,从而使最终产品失效。采用Al-Ni复合导带可以解决上述问题,并得到满意的结果。
It is a promising technology using Al conduction band in thin film HIC The problem is that when Al paste and Ag paste adhere to each other, at a certain temperature and for a certain period of time,a insulative intermetallic compound would be produced It could not be broken down until the voltage across reaches a certain level, which would lead to the failure of end products, The problem can be solved by means of Al Ni composite compound band
出处
《电子元件与材料》
CAS
CSCD
1997年第5期47-50,共4页
Electronic Components And Materials
关键词
真空沉积
刻蚀
金属间化合物
薄膜电路
vacuum deposition, composite conduction band,etching, intermetallic compound