单晶硅反应激波刻蚀试验研究

Experimental Study on Reactive Shock Wave Etching of Monocrystalline Silicon

提出基于脉冲超声波聚焦的反应激波刻蚀加工方法,采用大功率压电陶瓷激波发生器,在液体介质中产生聚焦脉冲超声波(频率1 MHz),由于传输过程中形成的非线性效应形成高能、瞬时压力激波,结合化学腐蚀方法,利用物理和声化学作用,使位于聚焦区域的材料迅速蚀除。采用激波、超声波和磁力搅拌3种不同方式对单晶硅进行刻蚀试验,结果表明反应激波刻蚀速率最快。在此基础上,进一步分析研究了腐蚀剂浓度、反应温度及激波功率等不同工艺参数对刻蚀速率的影响,并对反应激波刻蚀硅加工基本规律进行了探讨,为后续研究提拱了理论和试验基础。

In this paper, based on the focused of pulse ultrasound technology, reactive shockwave etching is presented which utilizes the high-energy transient pressure wave due to the non-linear propagation effects of which a shockwave generator produces series focused of pulse ultrasound of 1 MHz or so. Combined with wet etching process, the material in focused zone can be fast eroded by physical and chemical process as well. In comparison with ultrasonic and magnetic stirring methods, the monocrystalline silicon is etched in three different approaches respectively. It is demonstrated that reactive shockwave etching has the highest etch removal rate. Furthermore, the influences of etchant concentration, reaction temperature, power of shock wave and the basic principles of reactive shockwave etching on silicon as analyzed which is the foundations for the next step of theoretical and experimental research.