硅片激光弯曲成形的数值模拟与实验

Simulation and experiment of laser bending of silicon shee

介绍了一种利用脉冲激光塑性化弯曲单晶硅片的新方法。在分析和描述光脉冲时空特性的基础上,运用有限元分析软件ANSYS对硅片弯曲过程进行了建模仿真,得到了脉冲激光弯曲过程中温度场与应力应变的仿真结果。描述了脉冲激光作用过程中温度场与应力应变的周期性瞬间变化特征,指出了脆性材料硅片的脉冲激光弯曲机理不属于简单意义上的温度梯度机理或屈曲机理,而是两种机理共同作用的结果。通过6次扫描实验,实现了对硅片的有效弯曲,弯曲角度达6.5°,仿真结果与验证性实验相符。

A new method for pulsed laser bending of single-crystal silicon was presented. An analytical model was developed to describe the spatial-time characteristics of pulsed laser, and the Finite Element Method（FEM） software ANSYS was used for simulating the laser bending process to predict the temperature field and stress-strain field in the bending process. The periodic transformations of temperature field and stress-strain distribution during pulsed laser scanning silicon sheet were analyzed. The research results indicate that the mechanism of pulsed laser bending silicon is a composite mecha-nism, rather than a simplex mechanism of Temperature Mechanism （TM） or Bucking Mechanism （BM）. A bending experiment for silicon sheet was carried out by scanning 6 times with pulsed laser, the final bending angle is 6.5°. The simulation results are well agreement with the experiments.