摘要
在非致冷红外焦平面制作过程中引入化学镀镍实现光敏元阵列与读出电路的互连.该方法具有选择沉积、不需要外部电源的优点.在32×32非致冷红外焦平面阵列器件的制作中采用化学镀镍方法可实现超过85%互连成功率.测试结果表明:该方法被证实为一种实现焦平面和读出电路互连的简单、可靠的方法.
Electroless nickel plating (ENP) is introduced to realize interconnection for a photosensitive array and CMOS read-out circuit (ROIC) in uncooled infrared focal plane array (UIRFPA) fabrication process. It has advantages of selective deposition and no requirement for external current source supply. The effective interconnection pencent can he over 85% by using this technology for 32 x 32 UIRFPA fabrication process. The method is certified as a simple, low cost and reliable method for intereonnection between IRFPA and ROIC.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第2期91-94,共4页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金(60677025)资助项目
关键词
互连
选择性沉积
化学镀
红外焦平面
interconnection
selective deposition
electroless nickel plating
IRFPA