期刊文献+

压阻式冲击硅微机械加速度传感器的温度补偿 被引量:2

Temperature compensation for pizeoresistive silicon micromachined shock accelerometer
下载PDF
导出
摘要 给出了一种压阻式冲击硅微机械加速度传感器的温度补偿与实现方法。该方法采用串并联电阻来补偿加速度传感器的零位温度漂移,采用在电源后串联二极管来补偿加速度传感器的灵敏度温度漂移。具体实现时,采用高低温试验机对加速度传感器的环境温度进行变化,通过检测系统测量出4个压敏电阻在高低温时的电阻值,运用软件计算出补偿电阻值、补偿电阻在桥路中的位置以及串联二极管的数量,并根据计算结果构建出了带温度补偿的传感器检测电路。测试结果表明,这一方法能有效补偿加速度传感器的温度漂移。 A method of temperature compensation for pizeoresistive silicon mieromachined shock accelerometer and its accomplishment were presented. Series and parallel compensated resistance were connected in Wheatstone bridge to compensate zero position temperature drift of accelerometer. Series transistor diode after electricity supply was used to compensate sensitivity temperature drift of accelerometer. For accomplishment of this method, low-high temperature experimental machine was used to change environmental temperature of accelerometer. Testing system tested the resistance value of four pizeoresistor in low and high temperature. Software calculated the resistance value of compensated resistance, the position of compensated resistance in Wheatstone bridge and the number of series transistor diode. According to calculation result, testing electrical circuit with temperature compensation of accelerometer was set up for characterization. Characterization results show that this method is effective for compensating temperature drift of accelerometer.
作者 董健
出处 《机电工程》 CAS 2008年第4期80-83,共4页 Journal of Mechanical & Electrical Engineering
关键词 串并联电阻 零位温度漂移 灵敏度温度漂移 温度补偿 series and parallel compensated resistance zero position temperature drift sensitivity temperature drift temperature compensation
  • 相关文献

参考文献6

  • 1董健,李昕欣,王跃林,张鲲,宋朝晖.曲面过载保护的新型高g值冲击硅微机械加速度传感器的设计[J].机械强度,2003,25(2):148-150. 被引量:10
  • 2DONG Jian, LI Xin-xin, WANG Yue-lin, et al. Silicon micromachined high-shock accelerometers with a curved-surfaceapplication structure for over-range stop protection and free-mode-resonance depression [ J ]. Journal of Micromechanics and Microengineering,2002,12:742 - 746.
  • 3ZHANG Li-bin, DONG Jian, JI Shi-ming, et al. Structure and Dynamic Model of Silicon Micromachined Accelerometer with High g Value[ C]//2nd International Symposium on Instrumentation Science and Technology. Jinan: [ s. n. ] ,2002 : 119 - 124.
  • 4王志敏.压力传感器的温度补偿[J].自动化与仪表,2002,17(3):18-20. 被引量:11
  • 5樊尚春.传感器技术与应用[M].北京:北京航空航天大学出版社,2004.
  • 6董健.高g值冲击硅微机械加速度传感器的研究[D].杭州:浙江大学信息科学与工程学院,2003.

二级参考文献7

  • 1薛均义.MCS-51系列单片机微型计算机应用[M].西安:西安交通大学出版社,1998..
  • 2李春茂.电子技术应用[M].北京:中国建材工业出版社,1999..
  • 3李华.单片机接口技术[M].北京:北京航空航天大学出版社,1998..
  • 4Davies B, Barron C, Montague S, Smith J, Murray J, Christenson T. High g MEMS integrated accelerometer. Proc. SPIE, 1997, 3046:52.
  • 5Ning Y, Loke Y, McKinnon. Fabrication and characterization of high gforce silicon piezoresistive accelerometers. Sensors and Actuators, 1995, A 48: 55.
  • 6Chen H, Shen S, Bao M. Over-range capacity of a piesoresistive microaccelerometer. Sensors and Actuators, 1997, A 58:197.
  • 7Partridge A, Reynolds J, Chui B, Chow E, Fitzgerald A, Zhang L, Maluf N, Kenny T. A high performance planar piezoresistive accelerometer. Journal of Microelectromechnnical Systems, 2000, 9(1):58.

共引文献24

同被引文献9

引证文献2

二级引证文献12

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部