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Growth Mechanism and Characterization of Single-crystalline Ga-doped SnO2 Nanowires and Self-organized SnO2/Ga2O3 Heterogeneous Microcomb Structures 被引量:1

Growth Mechanism and Characterization of Single-crystalline Ga-doped SnO2 Nanowires and Self-organized SnO2/Ga2O3 Heterogeneous Microcomb Structures
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摘要 单人赛水晶的做 Ga 的 SnO2 nanowires 和 SnO2 : Ga2O3 异构的 microcombs 被一出简单一步舞综合热蒸发和冷凝作用方法。他们借助于 X 光检查粉末被描绘衍射(XRD ) ,地排放扫描电子显微镜学(FE-SEM ) ,精力散的 X 光检查光谱学(版本) ,传播电子显微镜学(TEM ) 和精选区域的电子衍射(SAED ) 。FE-SEM 图象证明产品由代表新奇形态学的 nanowires 和 microcombs 组成了。XRD, SAED 和版本显示他们是单人赛水晶的四角形的 SnO2。产品的形态学上的试验性的条件的影响被讨论。产品的形态学显示出沿着一个 nanoribbon 或双方均匀地排列的如带的茎和 nanoribbon 数组。许多 Ga2O3 nanoparticles 在 microcombs 的表面上扔了,这被发现。主要核心 nanoribbon 沿着主要成长了[110 ] 方向和自我组织的分叉 nanoribbons 取向附生地成长了[10 ] 或[10 ] 取向从(110 ) 茎的飞机。一个生长过程为解释这些显著 SnO2 的生长被建议: Ga2O3 异构的 microcombs。由于 Ga 的重做,在光致发光系列的排放山峰有转移红以及拓宽显著地。 Single-crystalline Ga-doped SnO2 nanowires and SnO2:Ga2O3 heterogeneous microcombs were synthesized by a simple one-step thermal evaporation and condensation method. They were characterized by means of X-ray powder diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). FE-SEM images showed that the products consisted of nanowires and mierocombs that represent a novel morphology. XRD, SAED and EDS indicated that they were single-crystalline tetragonal SnO2. The influence of experimental conditions on the morphologies of the products is discussed. The morphology of the product showed a ribbon-like stem and nanoribbon array aligned evenly along one or both side of the nanoribbon. It was found that many Ga2O3 nanoparticles deposited on the surface of the microcombs. The major core nanoribbon grew mainly along the [110] direction and the self-organized branching nanoribbons grew epitaxially along [110] or [110] orientation from the (110) plane of the stem. A growth process was proposed for interpreting the growth of these remarkable SnO2:Ga2O3 heterogeneous microcombs. Due to the heavy doping of Ga, the emission peak in photoluminescence spectra has red-shifted as well as broadened significantly.
出处 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 北大核心 2008年第2期181-186,共6页 化学物理学报(英文)
基金 This work was supported by the National Natural Science Foundation of China (No.20671027), and the Natural Science Foundation of Anhui province, China (No.050440904).
关键词 单晶体 生长机制 化学结构 纳米材料 Microcomb, Nanoribbon, Photoluminescence
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