Bi_2(Te_(1-x)Se_x)_3单晶的生长研究

A Study on the Growth of Bi_2 (Te_(1-x_Se_x)_3 Single Crystal

本工作研究了Bi－Te－Se三元相在富Bi2Te3区的相图。测定了Bi2Te3和Bi2Se3从550℃到它们的熔点范围内的等浓度线，用移动加热器（THM）法生长Bi2（Te1－xSex）3（x＝0．025和x＝0．05）。用霍尔（Hall）效应测定这些化合物在富Te区的固线，本研究表明，可再生法生长热力学定义的单晶是可能的。

This work studied the Bi - Te - Se ternary phase diagram on the Bi2Te3 - rich side and with excere telluriurn. The isoconcentration lineds for Bi2Te3 and Bi2Se3 have been determined for temperatures ranging from 550℃ to their melting points. Bi2 (Te1-xSex)3 single crystal solid solutions with x=0.025 and x=0.05 have been grown using the travelling heater method. The solidus line on the Te-rich side for these compositions has been detemined by Hall effect measurements. This study shows that it is pesible to grow thernedgnamically well-defined single crystals in a repreducible way.