摘要
分别对不同薄层电阻的扩散片制成的单晶硅太阳电池和同样薄层电阻不同频率沉积的SiN_X薄膜的单晶硅太阳电池的光谱响应进行了比较,从理论上分析了随着薄层电阻的增大和采用低频(40 kHz)的PECVD沉积SiN_X薄膜,短波响应得到提高的原因。光谱响应峰值随着薄层电阻的增大逐渐向短波方向移动。
The spectrum response of monocrystalline silicon solar cells manufactured by wafers with different sheet resistances and with same sheet resistance but different SiNx films deposited by PECVD with different frequencies was compared in the paper. The reason which the short wavelength response was inproved during the sheet resistances was increased and the low frequency （40kHz） deposition of SiNx film by PECVD was used was analyed theoretically. With the increasing of sheet resistance, the peak value of spectrum response was moves towards the short wavelength direction.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2008年第4期400-403,共4页
Acta Energiae Solaris Sinica
关键词
薄层电阻
短波响应
SiNx薄膜
sheet resistance
short wavelength response
SiNx film
