CMP后清洗技术的研究进展

Advances in Post-CMP Cleaning Technology

化学机械抛光(CMP)技术是目前广泛采用的几乎唯一的高精度全局平面化技术,抛光后表面的清洗质量直接关系到CMP技术水平的高低。介绍了各种机械、物理及化学清洗方法与工艺技术优缺点,指出了清洗剂、清洗方式是CMP后清洗技术中的关键要素。综述了CMP后清洗技术的发展现状,分析了CMP后清洗存在的问题,并对其发展趋势进行了展望。

Chemical mechanical polishing （CMP） is the only high precision and widely used finishing machining technology to date for surface global planarization. Post-CMP cleaning is one of the key factors influencing the CMP performances. The advantages and disadvantages of various mechanical, physical, chemical cleaning methods, and process are introduced. Detergent and cleaning method are the two main elements during post-CMP cleaning. The progress and problems of post-CMP cleaning are reviewed, and the trend of post-CMP cleaning is outlined.