Cu互连及其关键工艺技术研究现状

Investigation Status on Cu Interconnection and Its Key Technologies

低介电常数材料和低电阻率金属的使用可以有效地降低互连线引起的延时。Cu因其具有比Al及Al合金更低的电阻率和更高的抗电迁移能力而成为新一代互连材料。论述了Cu互连技术的工艺过程及其研究发展现状。对Cu互连技术中的阻挡层材料、电化学镀Cu技术以及化学机械抛光技术等一系列关键工艺技术进行系统的分析和讨论。

The use of low-k dielectrics and low resistivity metals could effectively decrease the delay caused by interconnection line. Cu becomes the new generation of interconnection material, owning to its lower resistivity and higher electromigration resistance than Al or other alloys. The process and development of Cu interconnection are described. The key technologies, such as barrier material, Cu electroplating and CMP （chemical mechanical polishing） are analyzed and discussed.