基于DOE优化设计抛光工艺参数

Optimal Process Parameter Design of CMP Based on DOE

适宜的抛光工艺参数对Si片表面平整度TTV、TIR、STIR等参数起到至关重要的作用。介绍了化学机械抛光(CMP)有效实现Si片全局和局部平坦化的方法和设施,指出并说明CMP是一种化学作用和机械作用相结合的技术,给出了其影响因素。利用DOE(design of experiment)实验方法,结合实际生产条件,获得并验证了最优化的生产工艺参数,改善了Si片表面平整度。

Appropriate process conditions of polishing are extremely important for surface flatness of silicon wafer （including TTV, TIR, STIR ）. How effectively realizing local and global planarization of silicon wafer chemical-mechanical polishing （CMP） was introduced. It was pointed out and discussed that CMP is a combination of chemical and mechanical technologies. The effect factors on CMP was given. With practical manufacture conditions and DOE （design of experiment ）, the optimal process parameters are obtained and validated for improving the surface flatness of silicon wafer.