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不同下电极对Sol-Gel LiTaO_3薄膜性能的影响

Effect of Different Electrodes on the Ferroelectric Properties of Sol-Gel LiTaO_3 Films
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摘要 用醇盐制备了钽酸锂(LiTaO3)溶胶,分别在Pt、ITO、TiN衬底上旋转涂胶成膜。经快速热退火后,用X射线衍射(XRD)测试了膜的结晶取向,用PLC-100铁电材料分析仪测试膜的铁电特性,用TH2818测试薄膜的介电常数及损耗。结果表明,3种衬底上制备出的薄膜在650℃均可达到充分结晶,薄膜的相对介电常数约160;在10 V时,Pt、ITO、TiN下电极上的剩余极化强度分别为8.42,5.21和5.76μC/cm2;在5 V时的漏电分别为2.71×10-7,9.24×10-7和2.19×10-7A/cm2;介电损耗分别为0.02,0.18和0.31。讨论了衬底对薄膜性能影响的原因。 LiTaO3 ferroelectrtic thin films were prepared by spin coating Sol--Gel LiTaO3 on the ITO, Pt and TiN substrates. The properties of LiTaO3 films after Rapid Thermal Annealing (RTA) were tested by X--ray Diffraction (XRD) for orientation of crystallization, by Radiant technology PLC--100 for ferroelectric hysteresis loops, the remnant polarization, by TH2818 for dielectric constant and loss. The resuits show that Sol--Gel LiTaO3 films can crystallize well based on the three substrates above mentioned at 650℃. Tested on 5 kHz, the relative dielectric constant and loss LiTaO3 at 5kHz for LiTaO3 films on TiN substrate are about 57. 8, 0. 395 respectively.
出处 《江苏工业学院学报》 2008年第1期5-8,共4页 Journal of Jiangsu Polytechnic University
基金 国家自然科学基金项目资助(60572007)
关键词 铁电薄膜 钽酸锂 电极 SOL-GEL ferroelectric thin film; lithium tantalite; electrode; Sol-Gel method
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