锗硅量子点掠入射小角X射线散射研究

GeSi quantum dots studied by grazing incidence small angle X-ray scattering

采用同步辐射X射线对MBE制备的锗硅量子点试样进行了掠入射小角X射线散射(GISAXS,grazing incidence small angle X-ray scattering)研究。根据AFM测量得到的量子点尺寸、形状和间距等参数,采用DWBA理论以及合适的分布函数,利用IsGISAXS程序对一维和二维GISAXS测量结果进行了模拟,模拟结果与实验数据符合很好,表明GISAXS是一种探测锗硅量子点尺寸、形状和分布等结构信息有效的方法。

Synchrotron radiation X-ray was used to carry out the grazing incidence small angle X-ray scattering （GISAXS） studies on GeSi quantum dots （QDs）. The QDs sample was grown by molecular beam epitaxy method. IsGISAXS program was used to simulate the GISAXS experiment data, the input parameters such as shape, size and inter-islands distance were obtained from atomic force microscopy observation, and the Distorted Wave Born Ap- proximation theory and appropriate distribution function were employed to simulate the 1D and 2D GISAXS experiment pattern. The simulated results fit the experiment data very well, which proves that the GISAXS is an effective method to probe the microstructure information about shape, size, and distribution of GeSi QDs.