利用m-MTDATA作为空穴注入层增加有机发光器件的效率

Enhanced Current Efficiency in Organic Light-emitting Devices Using 4,4′,4″-Tris(3-Methylphenylphenylamino)-Triphenylamine Buffer Layers

制备一种利用4,4′,4″-tris(3-methylphenylphenylamino)-triphenylamine(m-MTDATA)作为空穴注入缓冲层的器件.m-MTDATA增加部分从阳极ITO注入到有机层NPB的空穴,从而平衡了空穴和电子的注入,有缓冲层的有机发光器件比没有缓冲层有机发光器件的电流效率有了明显的提高.当缓冲层m-MTDA-TA为25 nm时,最大电流效率在7 V时达到3.15 cd/A,是没有缓冲层器件电流效率的近3.5倍.

A hole-injection buffer layer using 4,4＇, 4＂-tris （3-methylphenylphenylamino）-triphenylamine （m-MTDATA） in organic light-emitting devices has been fabricated. The m-MTDATA can be expected to be a good buffer layer material and thus enhances the emission performance of the organic lightemitting device. The m-MTDATA enhanced part of the injected holes from the indium-tin-oxide （ITO） anode to the organic layer （NPB） and improved the balance of hole and electron injections. The current efficiency was comparatively improved compared with those of devices without the buffer layer. The highest luminous efficiency of devices with 25 nm m-MTDATA acting as buffer layer reached 3. 15 cd/A,at 7 V,which is nearly 3.5 times than that of the device without it.