国内大功率半导体激光器研究及应用现状

Present situation of investigations and applications in high power semiconductor lasers

近年来,国内外在大功率半导体激光器方面的研究均取得了很大的进展。其中,大功率半导体激光器列阵的研究和应用成为最大的亮点,如超高电光转换效率、高亮度和高可靠性等主要光电特性均实现了巨大的突破。针对国内大功率半导体激光器主要研究内容和关键技术进行了总结,在外延片结构中广泛采用应变量子阱结构、无铝有源区宽波导大光腔结构及非对称波导结构来提高端面光学灾变损伤光功率密度,还从腔面光学膜、器件封装、器件可靠性、光束整形与耦合以及器件应用等几个方面给予介绍。

The high power semiconductor lasers is the core part of optic-electric practical devices nowadays. In recent years, considerable progress has been made in the high power semiconductor lasers in China and abroad. Moreover, the investigations and applications of the high power semiconductor laser array become the most attractive highlight in the field, and the main optic-electric performances, such as super-high electro-optical conversion efficiency, tremendous breakthrough. The main studies and key high brightness and high reliability, are realized technologies of the high power semiconductor lasers in China were summarized. Strained quantum well, A1-free active region broad waveguide structure and asymmetrical waveguide structure were widely adopted in epitaxial wafer structure to increase the COD power density and device properties. This paper was also including optical coating, packaging, device reliability, beam shaping and coupling and device applications.