基于直接调制和外调制的高速半导体激光光源

High speed semiconductor light sources based on direct modulation and external modulation

直接调制和外调制的半导体激光光源在现代光纤通信系统中有着重要的应用。首先介绍了应用于10 Gb/s接入网系统的直接调制AlGaInAs多量子阱DFB激光器。由于AlGaInAs量子阱的导带不连续性较大,因此基于该材料的半导体激光器具有良好的温度特性,其特征温度达到了88 K。同时,该直接调制激光器的3 dB小信号调制响应带宽超过15 GHz。随后介绍面向40 Gb/s干线传输系统的高速DFB激光器/EA调制器集成光源。该集成光源采用同一外延层集成方案,并采用Al2O3高速微波热沉进行了管芯级封装,在3 V反向偏压下获得大于13 dB的静态消光比,3 dB小信号调制带宽超过40 GHz。

Directly and externally modulated semiconductor lasers are key components in modern fiber communication systems. Firstly, the structure and fabrication process of a directly modulated AlGaInAs multiple quantum well DFB laser diode for 10 Gb/s access network were presented. AlGaInAs quantum wells had large conduction band offset, which led to improved temperature performance. A＇characteristic temperature as high as 88 K had been demonstrated for the AlGaInAs semiconductor laser diodes. In addition, the 3 dB small signal modulation bandwidth of the device was over 15 GHz. Secondly, a high-speed EA modulator integrated DFB laser diode for 40 Gb/s trunkline communication system was described. The device was based on identical epitaxial layer integration scheme and was mounted on an A1203-based microwave submount. The extinction ratio of the integrated device was larger than 13 dB at a bias of -3 V and its 3 dB bandwidth was measured to be over 40 GHz.