SiC_p/Cu复合材料电性能研究

Electrical Properties of SiCp/Cu Composites

利用热压烧结工艺制备了含20%～65%SiC(体积分数,下同)颗粒的SiCp/Cu复合材料。在室温到600℃温度范围内测定了复合材料的电阻率。结果表明,随着SiC颗粒含量的增加,SiCp/Cu复合材料的电阻率提高,电阻率渗滤阈值发生在SiCp含量大约55%时;含有20%～35%SiC颗粒的SiCp/Cu复合材料的电阻率随温度的升高而线性增加,表现为铜的电导特征;而含有50%～65%SiC颗粒的SiCp/Cu复合材料的电阻率随温度的升高在225～500℃温度范围内明显偏离线性增加关系。

SiCp/Cu composites of 20 vol%～65 vol% SiC particulate phase were prepared by hot pressing. The electrical resistivity of the composites was measured from room temperature to 600 ℃. The electrical resistivity of the SiCp/Cu composites increased with the increasing SiCp. The percolation threshold occurred at the SiC volume fraction of 55%. The variations of the electrical resistivity of the composites of the 20 vol%～35 vol% SiCp with temperature exhibited a linear relationship, with the electrical resistivity increasing as the temperature increased. When the fraction of SiCp exceeded 50 vol%, the variations of electrical resistivity of the composites with temperature deviated the linear relationship between 225 ℃ and 500 ℃.