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高温自蔓延法制备Al_4SiC_4粉体 被引量:1

Self-Propagating High Temperature Synthesis of Al_4SiC_4 Powders
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摘要 以金属Al粉、Si粉和炭黑为原料,采用自蔓延方法合成Al_4SiC_4粉体。合成产物经XRD和SEM分析表明,采用点燃的C和Ti粉混合物为化学炉,可以合成出粒度细且均匀的Al_4SiC_4粉体;坯体成型压力对合成影响不大;碳含量对合成粉体的组成有较大影响,以C含量过量30%的配比能够制备出不含Al_3C_4相,Al_4SiC_4含量可达80%的粉体。 Al4SiC4 powders were produced by self-propagating high temperature reaction of Al, Si powders and carbon black. The products were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM). Uniform and fine Al4SiC4 powders were obtained from the reactions. The mole ratio of carbon in the starting materials has large effects on the products while the reaction pressure showed no pronounced effects. Al4C3-free Al4SiC4 powders of 80wt% purity were obtained from the reactants containing 30% carbon.
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2008年第A01期782-784,共3页 Rare Metal Materials and Engineering
关键词 Al4SiC4粉体 高温自蔓延 化学炉 Al4SiC4 powders self-propagating high temperature synthesis chemical oven
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  • 1Inoue K, Yamaguchi A. Synthesis of Al4 SiC4. J Am Ceram Soc,2003,86 ( 6 ) : 1028 - 1030.
  • 2Inoue Z, Inomata Y, Tanaka H. X-ray crystallographic data on aluminum silicon carbide, ct-A14 SiC4 and AI4 Si2C5. J Mater Sci, 1980, 15(9) :575 -580.
  • 3Yokokawa H,Fujita M ,Ujiie S,et o!1. Phase relations associated with the aluminum blast furnace:aluminum oxycarbide melts and Al - C - X ( X=Fe,Si) liquid alloys. Metall Trans (B) ,1987,18(6) :433 -44.
  • 4Itatani K, Takahashi F, Aizawa M, et al. Densification and microstructural developments during the sintering of aluminum silicon carbide. J Mater Sci,2002,37 ( 5 ) : 335 - 342.
  • 5Yamamoto O, Ohtami M, Sasamoto T. Preparation and oxidation of Al4SiC4. J Mater Res,2002,17(4) :774 -778.
  • 6Inoue K, Yamaguchi A, Hashimoto S. Fabrication and resistance of Al4SiC4 body. J Ceram Soc Japan,2002,110( 11 ) : 1010 - 1015.
  • 7郑子樵,梁叔全.梯度功能材料的研究与展望[J].材料科学与工程,1992,10(1):1-5. 被引量:36

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  • 1邓承继,李涛,白晨,顾华志.固相反应合成Al_4SiC_4材料[J].耐火材料,2005,39(4):246-248. 被引量:10
  • 2黄小萧,温广武.Al_4SiC_4陶瓷的高温氧化行为[J].稀有金属材料与工程,2006,35(2):189-194. 被引量:3
  • 3ITATANI K, TAKAHASHI F, AIZAWA M, et al. Densification and microstructure developments during the sintering of aluminium silicon carbide [J]. J Mater Sci, 2002 (37): 335-342.
  • 4INOUE K, YAMAGUCHI A. Synthesis of Al4SiC4 [J]. J Am Ccram Soc, 2003, 86(6): 1028-1030,.
  • 5BAYER R P, JOHNSON E A. Heat capacity of aluminum silicon carbide (AI4SiC4) from 5.26 to 1 047 K [J]. J Chem Thermodynamics, 1984, 16: 1025-1029.
  • 6LEE J S, LEE S H, NISHIMURA T, et al. Hexagonal plate-like ternary carbide particulates synthesized by a carbothermal reduction process: processing parameters and synthesis mechanism [J]. J Am Ceram So~, 2009, 92(5): 1030-1035.
  • 7JOACHIM G~ LUKAS H L, ALDINGER F. Thermodynamic calculation of the ternary system AI-Si-C [J]. Calphad, 1996, 20(2): 247-254.
  • 8SONG Y P, KIM H S, LEE C S, et al. Predicting the adiabatic temparature of transparent Y3Al5O12 prepared via combustion synthesis under ultra-high gravity [J]. Mater Trans, 2010, 51: 2230-2235.
  • 9殷声.燃烧合成[M].北京:冶金工业出版社,2004.136-142.
  • 10黄小萧,温广武,白宏伟,张宝友.不同成分配比对Al_4SiC_4陶瓷组织及性能的影响[J].稀有金属材料与工程,2008,37(A01):210-212. 被引量:1

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