复合施主掺杂对(Ba,Pb)TiO_3系半导体陶瓷的影响

The Effects of Different Doner-Doping on the(Ba,Pb)TiO_3 Semiconductor Ceramics

通过固相法制备了施主掺杂的(Ba,Pb)TiO_3半导体陶瓷,研究了掺杂对(Ba,Pb)TiO_3陶瓷的物理性能、显微结构、电畴结构及半导化机理的影响。结果表明,掺加一定量的施主Sb^(3+),Nb^(5+)及复合施主(Sb^(3+),Nb^(5+))均可以实现陶瓷的半导化,而且杂质种类的不同材料的显微结构、电畴结构及半导化机理也存在显著的差别,复合施主掺杂可以进一步降低材料的室温电阻率,并且制得结构致密、高耐压值的(Ba,Pb)TiO_3陶瓷。结合不同施主掺杂对显微结构、电畴结构的影响及缺陷化学理论,对(Ba,Pb)TiO_3陶瓷的半导化机理给出了定性的解释。

（Ba,Pb）TiO3 semiconductor ceramic samples were synthesized by solid-phase reaction, and the effects of different donor-doping on the physical properties, microstructure, domain structures, and the semiconduction mechanism of the （Ba,Pb）TiO3 ceramics were discussed. The semi-conductive ceramics was obtained by donor-doping of Sb^3＋ or Nb^5＋, or composite- donor-doping of （Sb^3＋, Nb^5＋）, and their properties changed by the dope. The donor-doped composite exhibited a low room temperature resistivity, dense structure and high pressure endurance. The semiconduction mechanism of the ceramics was explained based on defect chemistry, and the role of the different donor-doping on the microstructure, domain structures of the materials.