基于中间硅片厚度可控的三层阳极键合技术

Triple-stack anodic bonding based on controllable thickness of in-between silicon

三层键合Glass-Silicon-Glass(GSG)结构在光MEMS、微惯性器件、微流体芯片、射频MEMS以及低成本圆片级封装技术领域里是一项重要技术。基于MEMS精密研磨抛光工艺和阳极键合,结合新型玻璃通孔的腐蚀工艺,开展了中间硅片厚度可控的三层阳极键合工艺研究,成功制备了带有通孔的GSG微流体器件。总厚度1360μm,中间硅片厚度60μm,通孔直径100μm,孔间距(圆孔的中心距离)200μm,孔内边缘圆滑无侧蚀。三层结构的键合几率为90%,为探索多层键合技术打下坚实基础。

Triple - stack bonding of glass - silicon - glass（GSG） structure is an important process, which is primarily used in professional fields including optical MEMS, micro - inertial devices, micro - fluidic chip,RF MEMS and wafer - level packaging（WLP） with low - cost. The dissertation focuses on the exact grinding and polishing processing, anodic bonding and combining with novel glass via - hole etching technology. The study of triple - stack anodic bonding based on the controllable thickness of silicon between glasses has been developed and finally GSG micro -fluidic device have been made successfully. The thickness of the whole chip and in - between silicon are 1360μm,60μm respectively. The diameter and space of via- hole（ the space between the center of the hole）are 100μm,200μm respectively, and the parietal of the via - hole is smooth and non - etching side. The bonding rate of the triple - structure is 90%.