高斜率效率隧道结叠层激光器的研制

Development of a High Slope Efficiency Tunnel Junction Stacks Laser

隧道结叠层激光器技术具有广泛的应用空间,如高斜率效率、高功率密度、多波长激光器等。采用LP-MOCVD系统生长隧道结材料,CCl4作为p型掺杂源,SiH4作为n型掺杂源,并采用δ掺杂技术,使得n+-GaAs的掺杂浓度大于1×1019/cm3,隧道结的面电阻率小于2×10-4Ω.cm2。设计生长了双叠层、三叠层材料,该材料制作的900nm双叠层激光器在200ns脉宽、20A工作电流下输出功率35W,斜率效率1.8W/A,是单层材料的1.8倍,隧穿结引入的压降约为0.15V;860nm三叠层激光器的斜率效率大于2.7W/A,是单层材料的2.7倍。

The technology of a tunnel junction stack diode laser has broad applications, such as a high slope efficiency, high power density and multiwavelength diode laser. The tunnel junction epiwafer was grown by LP-MOCVD with CCl4 as p-type doping source and SiH4 as n-type. The doping concentration of n^＋ -GaAs was more than 1 × 10^19/cm^3 and the surface resistivity of tunnel junction was less than 2 × 10^-4 Ω·cm^2 through δ doping technology. Double stacks and triple stacks laser wafers were grown and the diode laser was made. The outport power of 900 nm double stacks laser is 35 W with 200 ns pulse width at 20 A current, slope efficiency is 1.8 W/A which is 1.8 times higher than that of the conventional laser, and the voltage drop induced by tunnel junctions is about 0.15 V. The slope efficiency of 860 nm triple stacks is about 2.7 W/A, which is 2.7 times higher than that of the conventional laser.