利用常规工艺提高光子晶体GaN LED的出光效率

Enhancement of light extraction of photonic crystal GaN light emitting diodes(LEDs)using conventional technics

计算了GaN二维光子晶体的能带结构,并利用常规工艺在国内首次制备出了GaN基二维平板结构的光子晶体蓝光LED。经过器件测试表明,与没有制作光子晶体的器件相比,光子晶体使器件的有效出光效率达到了原来的1.5倍以上。另外,还对感应耦合等离子体刻蚀(ICP)的制备光子晶体LED的刻蚀工艺进行了分析。

We calculated the band structure of GaN 2D photonic crystal（PC）, and fabricated the GaN-based 2D PC blue LEDs. We selected conventional method to apply PC on LEDs,and obtained some good results. The light efficient output of LED with PC is about 1.5 times as high as that without PC. In addition,the etching rate of inductively coupled plasma（ICP） was analyzed.