半导体硅桥点火器的设计初探

A DESIGN OF IGNITRON SEMICONDUCTOR SILICIC BRIDGE TS STUDY

作者从半导体硅桥（ＳＣＢ）点火的机理出发，得到了实现ＳＣＢ点火的基本关系式并计算了ＳＣＢ在熔化、气化过程中与温度无关的比热．作者还对实现ＳＣＢ点火有关参数的取值进行了讨论．经对关系式的分析及计算证明与实验观测相符，其结果对ＳＣＢ的设计。

According to the experiment results and the fundamental physical conception of the semiconductor silicic bridge.The authors deduce a formula of igniron semiconduaor silicic bridge.The specific heat is 1.27J/g·℃,when the silico is melted and vaporozed.The Cvi is not depend upon temperature.The taking value of Di,Ri or ti is discussed.The authors obtain the formula of igniron SCB,it is basicalty consistent with the experiment resules and hence is applicable to design,fabricat and applicability of SCB.