混晶GaAs_(1-x)P_x∶N(x=0.88)中NN_1对束缚激子发光的声子伴线

The Phonon Sidebands of Excitons Bound to NN 1 Trap in GaAs 1-x P x ∶N( x = 0.88) Alloys

采用选择激发的实验手段，在混晶ＧａＡｓ１－ｘＰｘ∶Ｎ（ｘ＝０．８８）的光致发光谱中观察到ＮＮ１对束缚激子发光的声子伴线．通过荧光谱线窄化效应，在发光谱中得到与ＧａＰ∶Ｎ低温光致发光谱中Ａ线相似的ＮＮ１线的声子伴线精细结构，其中包括ＴＡ，ＬＡ，ＬＯ等声子伴线．这个结果在实验上有力地证实了在混晶ＧａＡｓ１－ｘＰｘ∶Ｎ中的确存在着ＮＮ１发光中心．

By using selective excitation technique, the phonon sideband of NN 1 pair emission is observed in GaAs 1-x P x ∶N( x = 0.88) alloys. Due to fluorescence line narrowing, the fine structure of phonon sidebands of NN 1 pair emission , which is very similar to that of A line in GaP∶N, including TA, LA, LO phonons, is distinguished. This result confirms that the NN 1 centers do exist in GaAs 1-x P x ∶N alloys experimentally.