纳米SiO_2浆料中半导体硅片的电化学腐蚀研究

Electrochemical Corrosion of Silicon Wafers in Silica Slurry

采用电化学直流极化和交流阻抗技术,研究了n型(111)半导体硅片在不同条件纳米SiO2浆料中的电化学腐蚀性能。结果表明,浆料的pH值、温度、磨粒固含量以及金属杂质离子等因素都不同程度地影响硅片的腐蚀行为。随pH值增加、温度提高和磨粒固含量降低,其腐蚀电流增大,交流阻抗减小,硅片腐蚀较易进行;微量金属杂质离子的存在也会加速硅片的腐蚀。

Electrochemical corrosion performance of n （ 111 ） silicon wafers in the nano-size SiO2 slurry under different conditions were investigated by using electrochemical DC polarization and AC impedance techniques. The results show that the factors including pH values, temperature, nanoparticles concentration and metal impurity ions content of the SiO2 slurry affected corrosion behaviours of silicon wafer to a different degree. Silicon wafers were corroded more easily with pH values increasing, temperature rising or nanoparticles concentration decreasing. A minute amount of metal impurity ions in the slurry can also accelerate the corrosion rate of silicon wafers.