非对称量子阱中二次极化率的研究(英文)

Second-order nonlinear optical susceptibility in asymmetrical quantum well

利用密度矩阵的方法研究了一种非对称量子阱的光学非线性,推导出了二次谐波解析表达式,最后利用典型的GaAs/AlGaAs非对称量子阱进行数值计算.数值结果表明,当非对称性增大时,可得到比较大的二次谐波,从而为实验上制作比较大的非线性材料提供一种可行办法.

Within the framework of the compact-density-matrix approach and an iterative method, the second-order susceptibility coeffcient for asymmetrical quantum well are investigated. Finally, the numerical results are presented for a typical GaAs/AlGaAs asymmetric quantum well. The larger secondorder susceptibility coefficient was obtained in this special quantum well. This is a feasible way to get fine nonlinear materials in experiment.